Web29 May 2024 · Strained Germanium-on-Silicon Lasers (2016 Semiconductor Science and Technology 31 065015) that may cause confu sion to readers. Regarding figure 3, the x axis title should be ‘Current Density (kA/cm2)’ instead of ‘Threshold Current Density (kA/cm2)’. The correct figure is reproduced below. Web15 Jun 2024 · The second-order χ (2) process underpins many important nonlinear optical applications in the field of classical and quantum optics. Generally, the χ (2) process manifests itself only in a non-centrosymmetric dielectric medium via an anharmonic electron oscillation when driven by an intense optical field. Due to inversion symmetry, group-IV …
Highly strained and heavily doped germanium thin films …
Web21 Mar 2024 · Germanium (Ge) has been attracting significant attention of researchers for around a decade due to its potential to be converted into an efficient CMOS-compatible … Web24 Sep 2007 · DOI: 10.1109/LED.2007.905406 Corpus ID: 34933532; Strained p-Channel FinFETs With Extended $\Pi$ -Shaped Silicon–Germanium Source and Drain Stressors @article{Tan2007StrainedPF, title={Strained p-Channel FinFETs With Extended \$\Pi\$ -Shaped Silicon–Germanium Source and Drain Stressors}, author={Kian Ming Tan and … hassy jatra
Strained germanium nanowire optoelectronic devices for photonic ...
WebWe find reduced optical loss in optical cavities formed with germanium under high (>2.3%) tensile strain. Our compact, high-strain cavities open up new possibilities for low … Web15 Jun 2024 · Abstract: In this article, we have evaluated the merits of monolithically cointegrated alternate channel complementary metal-oxide-semiconductor (CMOS) … Web15 Sep 2024 · In this work, a viable method is demonstrated to realize high-performance germanium (Ge) photodetectors (PDs) on the nanostructured Ge surface, namely black Ge, formed by chlorine (Cl 2) gas-based reactive ion etching at room temperature.Black Ge surface has spike-like pyramidal structures with a width and height up to 150 and 570 nm, … puven ramasamy